DocumentCode :
517448
Title :
Transport Through Magnetic Quantum Point Contacts
Author :
Day, Timothy E. ; Cummings, Aron W. ; Burke, Adam M. ; Ferry, David K. ; Goodnick, Stephen M. ; Reno, John L.
Author_Institution :
Department of Electrical Engineering, Arizona State University
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
911
Lastpage :
914
Abstract :
Hybrid magnetic quantum point contacts were fabricated in the plane of a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied inplane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the well-known spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions. In addition, a sharply magnetic field dependent washout of the conductance plateaus suggested evidence of a significant effect of the local fringe field on electron transport in the QPC region.
Keywords :
Educational institutions; Electron traps; Integrated circuit noise; Nanoscale devices; Probability; Quantum computing; Semiconductor device noise; Switches; Telecommunication network reliability; Wires; AIGaAs/GaAs; quantum point contact; in-plane magnetic field; spintronics; 0. 7-structure; cobalt;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5473876
Link To Document :
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