Atomic layer deposited (ALD) Zinc Oxide film characterization for NEMS and MEMS

We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials, its compatibility with other processing schemes and its ability to be performed at relatively low temperatures. In order to exploit the aforementioned ALD beneficial characteristics we have undertaken an effort aimed at the characterization of ALD Zinc Oxide (ZnO) films. The films were characterized employing ellipsometry, atomic force microscopy, film stress measurements, contact angle measurements, XPS, XRD measurements and thin film inspection by scanning electron microscopy.