DocumentCode
519195
Title
The stochastic based model of monolithic active inductor
Author
Banchuin, R. ; Chaisricharoen, R.
Author_Institution
Dept. of Comput. Eng., Siam Univ., Bangkok, Thailand
fYear
2010
fDate
19-21 May 2010
Firstpage
1
Lastpage
5
Abstract
In this research, the model which describes the stochastic effect of the bias current to the inductance of the monolithic active inductor has been proposed. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence. This research has been performed based upon the up to dated CMOS technology. The proposed model is applicable to any CMOS monolithic active inductor. Hence, it has been found to be a convenience tool for the design of various active inductor based applications.
Keywords
CMOS integrated circuits; inductance; inductors; stochastic processes; CMOS monolithic active inductor; CMOS technology; bias current; inductance; stochastic behavior; stochastic effect; various active inductor; Active inductors; CMOS technology; Filters; Inductance; Oscillators; Random processes; Semiconductor device modeling; Stochastic processes; Testing; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on
Conference_Location
Chaing Mai
Print_ISBN
978-1-4244-5606-2
Electronic_ISBN
978-1-4244-5607-9
Type
conf
Filename
5491559
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