Title :
Fabrication, characterization and analysis of ITO/n-Si Schottky photodetector
Author :
Ueamanapong, Surada ; Srithanachai, Itsara ; Atiwongsangthong, Narin ; Pengpad, Putapon ; Niemcharoen, Surasak ; Poyai, Amporn ; Supadech, Somkiet
Author_Institution :
Dept. of Electron. Fac. of Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
In this article, we have studied contact between indium tin oxide (ITO) and n-type silicon. First, the characteristics of ITO thin films have been identified. The films have high transparent and low resistivity (~88 % of transmittance and 2.8 × 10-3 Ω-cm). Fabrication of the ITO/n-Si photodetector was presented which was ITO thin layer deposited on 10 Ω-cm resistivity silicon wafer by R.F. sputter method. Finally, a study of characteristics of the photodetector such as I-V characteristics, C-V characteristics, and frequency response has been done. The photodetectors have built in voltage (Vbi) about 0.26 V, the dark current of 5 μA and light current of 1.5 mA at 25,000 lux, 5V. Capacitance and frequency response are about 110 pF and 120 kHz, respectively.
Keywords :
Schottky barriers; indium compounds; photodetectors; sputtering; thin film circuits; tin compounds; C-V characteristics; I-V characteristics; R.F. sputter method; capacitance 110 pF; current 1.5 mA; current 5 muA; frequency 120 kHz; frequency response; indium tin oxide Schottky photodetector; indium tin oxide thin films; n-type silicon Schottky photodetector; resistivity 10 ohmcm; voltage 0.26 V; voltage 5 V; Capacitance-voltage characteristics; Conductivity; Dark current; Fabrication; Frequency response; Indium tin oxide; Photodetectors; Silicon; Sputtering; Voltage; fast fourier transform (FFT); frequency response; photodetector;
Conference_Titel :
Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on
Conference_Location :
Chaing Mai
Print_ISBN :
978-1-4244-5606-2
Electronic_ISBN :
978-1-4244-5607-9
