DocumentCode
519238
Title
Effect of substrate position on the formation of ZnO nanostructures synthesized by thermal evaporation of ZnO-CNTs mixture
Author
Pitayapiboonpong, S. ; Kanjanachuchai, S. ; Phokharatkul, D. ; Tuantranont, A. ; Wisitsoraat, A.
Author_Institution
Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand
fYear
2010
fDate
19-21 May 2010
Firstpage
768
Lastpage
771
Abstract
In this work, the effect of substrate position on the formation of ZnO nanostructures synthesized by thermal evaporation of zinc oxide (ZnO) and carbon nanotubes (CNTs) on silicon substrate is investigated. The multi-wall CNT powder made by chemical vapor deposition was mixed with ZnO powder with a molar ratio of 1:1. The source material was put into the middle of chamber while Si substrates were placed at various locations from the center to the end of the tube furnace. The evaporation took place at 950°C and 2 Torr under argon gas flow rate of 500 seem and the system was vented at this temperature at the end of process. Structural characterization by scanning electron microscopy showed that ZnO tetrapod-like structures are formed in samples at different positions but they have different densities, sizes and morphologies. The density and size of ZnO nanotetrapods are found to decrease as the distance from source powder increases and substrate temperature decreases. In addition, considerable carbon content and high crystallinity of wurtzite ZnO nanostructure were observed by energy dispersive x-ray spectrometry and x-ray diffraction. Moreover, ZnO nanostructures have a wide blue-green luminescent band between 380 and 600 nm.
Keywords
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; carbon nanotubes; chemical vapour deposition; crystal structure; luminescence; nanofabrication; nanoparticles; powders; scanning electron microscopy; semiconductor growth; silicon; vacuum deposition; wide band gap semiconductors; zinc compounds; EDX; SEM; Si; X-ray diffraction; XRD; ZnO-C; argon gas flow rate; blue-green luminescent band; carbon content; chemical vapor deposition; crystallinity; energy dispersive X-ray spectrometry; multiwall carbon nanotube powder; pressure 2 torr; scanning electron microscopy; silicon substrate; structural characterization; substrate position; substrate temperature; temperature 950 degC; thermal evaporation; tube furnace; wavelength 380 nm to 600 nm; wurtzite zinc oxide nanostructure; zinc oxide nanotetrapods; zinc oxide powder; zinc oxide tetrapod-like structures; zinc oxide-carbon nanotube mixture; Argon; Carbon nanotubes; Chemical vapor deposition; Furnaces; Nanostructured materials; Nanostructures; Powders; Silicon; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on
Conference_Location
Chiang Mai
Print_ISBN
978-1-4244-5606-2
Electronic_ISBN
978-1-4244-5607-9
Type
conf
Filename
5491607
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