GaN large-signal oscillator design using Auxiliary Generator measurements

Author

Kühn, Silvio ; Heinrich, Wolfgang

Author_Institution

Bus. Area Microwave Components & Syst., Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

110

Lastpage

113

Abstract

This paper describes the usage of the Auxiliary Generator (AG) method in the large-signal design process of a microwave oscillator. The oscillator circuit is based on a high power Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) as active component and is used to ignite and maintain a plasma, which acts as a built-in non-linear load. The oscillator works in class A-AB in the range of 2.3 GHz. The AG method is used to monitor and optimize the oscillation characteristics under large-signal oscillation conditions.

Keywords

UHF oscillators; gallium compounds; high electron mobility transistors; microwave oscillators; plasma applications; signal generators; wide band gap semiconductors; AG method; GaN; auxiliary generator measurements; class A-AB oscillator; frequency 2.3 GHz; gallium-nitride high electron mobility transistor; large-signal oscillator design; microwave oscillator; oscillation characteristics; oscillator circuit; Circuits; Gallium nitride; HEMTs; High power microwave generation; MODFETs; Microwave generation; Microwave oscillators; Microwave theory and techniques; Plasma measurements; Process design; Auxiliary Generator; Large Signal Analysis; Oscillator Design; Plasma;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498212