Title :
Design of low-power RTD-based-VCOs for Ka-band application
Author :
Münstermann, B. ; Blekker, K. ; Tchegho, A. ; Brockerhoff, W. ; Tegude, F.-J.
Author_Institution :
Solid-State Electron. Dept., Univ. of Duisburg-Essen, Duisburg, Germany
Abstract :
In order to design a VCO based on resonant tunneling Diodes (RTD) new methods are developed to characterize the device behavior especially in the negative resistance regime. Based on a combined RTD/HBT technology a new VCO-circuit is designed and fabricated with high output power and a tuning range of 1 GHz at 20 GHz oscillation frequency.
Keywords :
circuit tuning; heterojunction bipolar transistors; low-power electronics; negative resistance; resonant tunnelling diodes; voltage-controlled oscillators; Ka-band application; RTD/HBT technology; VCO-circuit; device behavior; frequency 1 GHz; frequency 20 GHz; low-power RTD-based-VCO; negative resistance; oscillation frequency; resonant tunneling diodes; tuning; Etching; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Resonant tunneling devices; Semiconductor diodes; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
