Design of low-power RTD-based-VCOs for Ka-band application

Author

Münstermann, B. ; Blekker, K. ; Tchegho, A. ; Brockerhoff, W. ; Tegude, F.-J.

Author_Institution

Solid-State Electron. Dept., Univ. of Duisburg-Essen, Duisburg, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

39

Lastpage

42

Abstract

In order to design a VCO based on resonant tunneling Diodes (RTD) new methods are developed to characterize the device behavior especially in the negative resistance regime. Based on a combined RTD/HBT technology a new VCO-circuit is designed and fabricated with high output power and a tuning range of 1 GHz at 20 GHz oscillation frequency.

Keywords

circuit tuning; heterojunction bipolar transistors; low-power electronics; negative resistance; resonant tunnelling diodes; voltage-controlled oscillators; Ka-band application; RTD/HBT technology; VCO-circuit; device behavior; frequency 1 GHz; frequency 20 GHz; low-power RTD-based-VCO; negative resistance; oscillation frequency; resonant tunneling diodes; tuning; Etching; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Resonant tunneling devices; Semiconductor diodes; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498242