DocumentCode :
519800
Title :
Impact of device scaling on phase noise in SiGe HBTs tunable active inductor oscillators (TAIOs)
Author :
Rohde, Ulrich L. ; Poddar, Ajay K.
Author_Institution :
Synergy Microwave Corp., Paterson, NJ, USA
fYear :
2010
fDate :
15-17 March 2010
Firstpage :
47
Lastpage :
50
Abstract :
This paper describes the impact of device scaling on phase noise in SiGe HBT tunable active inductor oscillator (TAIOs), which has recently emerged as a strong contender for RF and mixed signal applications. The relative contributions of the broadband (thermal and shot noise) and low frequency (1/f noise) noise sources were examined. The measured phase noise results reveal that device scaling increases the contribution from 1/f noise (near carrier), whereas, decreases the contribution from shot and thermal (far carrier).
Keywords :
1/f noise; Ge-Si alloys; active networks; heterojunction bipolar transistors; inductors; oscillators; phase noise; SiGe; SiGe HBT; TAIO; broadband noise; device scaling; low frequency noise; phase noise; tunable active inductor oscillators; Active inductors; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Oscillators; Phase noise; RF signals; Radio frequency; Silicon germanium; 1/f Noise; RF; SiGe HBTs; TAIOs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
Type :
conf
Filename :
5498244
Link To Document :
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