DocumentCode :
519808
Title :
Substrate integrated circuits (SICs) for GHz and THz electronics and photonics: Current status and future outlook
Author :
Wu, Ke
Author_Institution :
Dept. of Electr. Eng., Univ. of Montreal, Montréal, QC, Canada
fYear :
2010
fDate :
15-17 March 2010
Firstpage :
292
Lastpage :
295
Abstract :
This paper attempts to provide a panoramic picture of the research and development of substrate integrated circuits (SICs), presumably the next generation of high-frequency integrated circuits for GHz and THz electronics and photonics. This work begins with a summarized overview of current status of SICs-related research over microwave and millimeter-wave frequency ranges, and an outlook into their future development is then discussed with respect to the last unexplored (or rather limited) explored frontier of THz electromagnetic spectrum. With special interest in low-cost and matured CMOS and Si-related technologies, we would be able to examine the possibility of using SICs technologies within such matured processing platforms. This development may be enabled by the rapid deployment of through-silicon via (TSV) processes and related 3-D stack Silicon techniques as well as material research progress such as nanostructured and subwavelength plasmonics. In this way, SICs may allow us to anticipate and extrapolate their applications trends towards the THz frequency range where no tangible integrated circuits technology is available to date. Challenging issues and future directions are considered, pointing to a potentially cost-effective and performance-promising ICs solution for mass commercial applications.
Keywords :
CMOS integrated circuits; integrated optics; microwave integrated circuits; plasmonics; three-dimensional integrated circuits; 3D stack silicon techniques; CMOS; GHz electronics; Si-related technology; THz electromagnetic spectrum; THz electronics; high-frequency integrated circuits; microwave frequency ranges; millimeter-wave frequency ranges; nanostructured; photonics; research and development; substrate integrated circuits; subwavelength plasmonics; through-silicon via processes; CMOS process; CMOS technology; Electromagnetic spectrum; Frequency; Microwave photonics; Millimeter wave integrated circuits; Millimeter wave technology; Photonic integrated circuits; Research and development; Silicon carbide; Substrate integrated circuits (SICs); THz technology; millimeter-waves; three-dimensional (3-D) technology; through-silicon-via (TSV);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
Type :
conf
Filename :
5498263
Link To Document :
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