DocumentCode
519817
Title
Analysis and optimization of a DAR IMPATT diode for millimetric region
Author
Zemliak, Alexander ; Cabrera, Santiago
Author_Institution
Dept. of Phys. & Math., Autonomous Univ. of Puebla, Puebla, Mexico
fYear
2010
fDate
15-17 March 2010
Firstpage
258
Lastpage
261
Abstract
The analysis and optimization of the n+pvnp+ avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and had been optimized for the third frequency band near the 300 GHz.
Keywords
IMPATT diodes; electric admittance; optimisation; DAR IMP ATT diode; DAR diode; admittance characteristics; frequency 30 GHz to 360 GHz; millimetric region; n+pvnp+ avalanche diode structure; optimization; wide frequency band; Boundary conditions; Charge carrier processes; Delay; Ionization; Mathematics; Physics; Poisson equations; Power generation; Radio frequency; Semiconductor diodes; DAR IMPATT diode; implicit numerical scheme; semiconductor structure optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2010 German
Conference_Location
Berlin
Print_ISBN
978-1-4244-4933-0
Electronic_ISBN
978-3-9812668-1-8
Type
conf
Filename
5498278
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