Title :
Analysis and optimization of a DAR IMPATT diode for millimetric region
Author :
Zemliak, Alexander ; Cabrera, Santiago
Author_Institution :
Dept. of Phys. & Math., Autonomous Univ. of Puebla, Puebla, Mexico
Abstract :
The analysis and optimization of the n+pvnp+ avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and had been optimized for the third frequency band near the 300 GHz.
Keywords :
IMPATT diodes; electric admittance; optimisation; DAR IMP ATT diode; DAR diode; admittance characteristics; frequency 30 GHz to 360 GHz; millimetric region; n+pvnp+ avalanche diode structure; optimization; wide frequency band; Boundary conditions; Charge carrier processes; Delay; Ionization; Mathematics; Physics; Poisson equations; Power generation; Radio frequency; Semiconductor diodes; DAR IMPATT diode; implicit numerical scheme; semiconductor structure optimization;
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
