Title :
Optical spectroscopy of Bi containing semiconductors
Author :
Chernikov, A. ; Chatterjee, S. ; Koch, M. ; Bückers, C. ; Koch, S.W. ; Imhof, S. ; Thränhardt, A. ; Lu, Xianfeng ; Johnson, S.R. ; Beaton, D.A. ; Tiedje, T.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg, Germany
Abstract :
The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.
Keywords :
arsenic compounds; bismuth; gallium; photoluminescence; semiconductor materials; visible spectroscopy; Bi; Ga(AsBi); excitation density; excitation energy; lattice temperature; optical spectroscopy; semiconductor material; time-resolved photoluminescence; Bismuth; Lattices; Optical materials; Optical scattering; Photoluminescence; Photonic band gap; Physics; Semiconductor materials; Spectroscopy; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
