• DocumentCode
    519959
  • Title

    Deep ultraviolet LEDs based on AlGaN alloys by plasma-assisted molecular beam epitaxy

  • Author

    Liao, Yitao ; Thomidis, Christos ; Kao, Chen-Kai ; Bellotti, Enrico ; Moustakas, Theodore D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.
  • Keywords
    III-V semiconductors; light emitting diodes; molecular beam epitaxial growth; AlGaN alloys; deep ultraviolet LED; plasma-assisted molecular beam epitaxy; Aluminum gallium nitride; Biomedical optical imaging; Capacitive sensors; Gold; Light emitting diodes; Molecular beam epitaxial growth; Optical surface waves; Plasma sources; Stimulated emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=519959