DocumentCode
520026
Title
1500-nm InP diode lasers optimized for use at 77K demonstrate 73% conversion efficiency
Author
Leisher, Paul ; Dong, Weimin ; Grimshaw, Mike ; DeFranza, Mark ; Dubinskii, Mark ; Patterson, Steve ; Martinsen, Rob
Author_Institution
nLight Corp., Vancouver, WA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
The power conversion efficiency of cryogenically-cooled InP diode lasers is limited by excess electrical voltage caused by carrier freeze-out. A laser design which specifically mitigates this effect demonstrates peak efficiency of 73% at 77 K.
Keywords
III-V semiconductors; indium compounds; semiconductor lasers; InP; cryogenically-cooled diode lasers; laser design; power conversion efficiency; temperature 77 K; wavelength 1500 nm; Diode lasers; Indium phosphide; Laser excitation; Optical design; Power measurement; Pump lasers; Semiconductor lasers; Solid lasers; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499584
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