Title :
High-amplitude THz and GHz strain waves, generated by ultrafast screening of piezoelectric fields in InGaN/GaN multiple quantum wells
Author :
Porte, H.P. ; van Capel, P.J.S. ; Turchinovich, D. ; Dijkhuis, J.I.
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; quantum wells; time resolved spectroscopy; GHz strain waves; InGaN-GaN; THz strain waves; multiple quantum wells; photoluminescence; piezoelectric fields; time resolved spectroscopy; ultrafast screening; Absorption; Acoustic emission; Capacitive sensors; Frequency; Gallium nitride; Photoluminescence; Probes; Quantum well devices; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
