DocumentCode :
520261
Title :
Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes
Author :
Yi, Fei ; Ou, Fang ; Liu, Boyang ; Huang, Yingyan ; Ho, Seng-Tiong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
We propose a compact GaAs EO modulator structure with ultra low switching voltage (~0.5V) and large modulation bandwidth (f3dBo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; optical switches; GaAs; electro-optic modulator; large bandwidth; transparent conducting bridge electrodes; ultra low switching voltage; Bandwidth; Bridge circuits; Electrodes; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Low voltage; Optical buffering; Optical refraction; Optical waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5499830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=520261
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