• DocumentCode
    520261
  • Title

    Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

  • Author

    Yi, Fei ; Ou, Fang ; Liu, Boyang ; Huang, Yingyan ; Ho, Seng-Tiong

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a compact GaAs EO modulator structure with ultra low switching voltage (~0.5V) and large modulation bandwidth (f3dBo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.
  • Keywords
    III-V semiconductors; electro-optical modulation; gallium arsenide; optical switches; GaAs; electro-optic modulator; large bandwidth; transparent conducting bridge electrodes; ultra low switching voltage; Bandwidth; Bridge circuits; Electrodes; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Low voltage; Optical buffering; Optical refraction; Optical waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520261