DocumentCode :
520335
Title :
Electrically pumped photonic crystal nanocavities using a laterally doped p-i-n junction
Author :
Ellis, Bryan ; Sarmiento, Tomas ; Mayer, Marie ; Stone, Peter ; Beeman, Jeff ; Zhang, Bingyang ; Dubon, Oscar ; Haller, Eugene ; Yamamoto, Yoshihisa ; Harris, James ; Vuckovic, Jelena
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Ion implantation doping is used to define a laterally doped p-i-n junction to electrically pump a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Cavity coupled electroluminescence is demonstrated.
Keywords :
Biomembranes; Doping; Gold; High speed optical techniques; Optical interconnections; Optical modulation; Optical pumping; PIN photodiodes; Photonic crystals; Power system interconnection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5499906
Link To Document :
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