• DocumentCode
    520401
  • Title

    Room-temperature operation of λ≈3.7µm Ga0.47In0.53As/ Al0.48In0.52As quantum cascade laser sources

  • Author

    Jang, M. ; Adams, R.W. ; Chen, J.-Z. ; Gmachl, C. ; Cheng, L. ; Choa, F.S. ; Belkin, M.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; quantum cascade lasers; Ga0.47In0.53As-Al0.48In0.52As; conversion efficiencies; frequency doubling; quantum cascade laser sources; strain-compensated materials; temperature 293 K to 298 K; Chemical lasers; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Laser modes; Laser transitions; Optical harmonic generation; Optical waveguides; Quantum cascade lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520401