Title :
Room-temperature operation of λ≈3.7µm Ga0.47In0.53As/ Al0.48In0.52As quantum cascade laser sources
Author :
Jang, M. ; Adams, R.W. ; Chen, J.-Z. ; Gmachl, C. ; Cheng, L. ; Choa, F.S. ; Belkin, M.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We report room-temperature operation of λ≈3.7μm lattice-matched InGaAs/AlInAs/InP quantum cascade lasers based on frequency doubling with ~2mW/W2 conversion efficiencies. Similar devices based on 1% strain-compensated materials can operate at λ=3-3.7μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; quantum cascade lasers; Ga0.47In0.53As-Al0.48In0.52As; conversion efficiencies; frequency doubling; quantum cascade laser sources; strain-compensated materials; temperature 293 K to 298 K; Chemical lasers; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Laser modes; Laser transitions; Optical harmonic generation; Optical waveguides; Quantum cascade lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
