Title :
Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence
Author :
Chuang, Linus C. ; Ng, Kar Wei ; Tran, Thai-Truong D. ; Ko, Wai Son ; Moewe, Michael ; Crankshaw, Shanna ; Chen, Roger ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths.
Keywords :
Crystallization; Gallium arsenide; III-V semiconductor materials; Lattices; Luminescence; MOCVD; Neural networks; Substrates; Thermal conductivity; Thermal management;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
