Title :
Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns
Author :
Liu, Guangyu ; Zhao, Hongping ; Park, Joo Hyung ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010 cm-2, which represents the highest QDs density reported for nitride-based QDs.
Keywords :
III-V semiconductors; indium compounds; nanophotonics; optical fabrication; polymer blends; quantum dots; wide band gap semiconductors; InGaN; growths of ultra high density quantum dots; selective area growths; self-assembled diblock copolymer nanopatterns; Capacitive sensors; Gallium nitride; Light emitting diodes; Nanopatterning; Quantum dot lasers; Quantum dots; Radiative recombination; Scanning electron microscopy; Self-assembly; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
