DocumentCode
520432
Title
Absorber and gain dynamics in dilute nitride mode-locked lasers
Author
Thoma, Jiri ; Ochalski, Tomasz ; Piwonski, Tomasz ; Hegarty, Stephen P. ; Huyet, Guillaume ; Haring, Kimmo ; Puustinen, Janne ; Guina, Mircea
Author_Institution
Tyndall Nat. Inst., Cork, Ireland
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
We report a comparison between the high-speed gain and absorber dynamics of dilute nitride laser structures utilising GaAs or GaAsN barrier layers. The inclusion of dilute nitride barriers greatly reduces the absorber recovery time. The wafers were processed into two-section monolithic mode-locked lasers generating 2-5 ps pulses at 40 GHz.
Keywords
III-V semiconductors; gallium arsenide; laser mode locking; semiconductor lasers; GaAs; GaAsN; absorber dynamics; barrier layers; frequency 40 GHz; gain dynamics; time 2 ps to 5 ps; two-section monolithic mode-locked lasers; Gallium arsenide; Geometrical optics; Laser mode locking; Optical pulse generation; Optical pulses; Pulse measurements; Quantum well lasers; Radiative recombination; Semiconductor lasers; Solid lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500010
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