DocumentCode :
520436
Title :
Rate equation analysis of quantum dot population in InAs/GaAs laser structures
Author :
O´Driscoll, I. ; Blood, P. ; Smowton, P.M.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Using a rate equation model we quantitatively reproduce experimental results showing the transition from random to thermal population across the whole temperature range and measure the impact on laser operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs; laser structures; quantum dot population; rate equation analysis; thermal population; Absorption; Electrons; Equations; Gain measurement; Gallium arsenide; Laser modes; Laser transitions; Phonons; Quantum dot lasers; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500014
Link To Document :
بازگشت