Title :
Bandstructure engineering with a two-dimensional patterned quantum dot lattice
Author :
Verma, V.B. ; Dias, N.L. ; Reddy, U. ; Bassett, K.P. ; Li, X. ; Coleman, J.J.
Author_Institution :
Univ. of Illinois, Urbana, IL, USA
Abstract :
A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.
Keywords :
etching; excited states; optical properties; semiconductor lasers; semiconductor quantum dots; 2D patterned quantum dot lattice; bandstructure engineering; excited state lasing; interdot coupling; phonon bottleneck-like effect; semiconductor laser; Gallium arsenide; Laser transitions; Lattices; Optical coupling; Optical scattering; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
