DocumentCode
520442
Title
Bandstructure engineering with a two-dimensional patterned quantum dot lattice
Author
Verma, V.B. ; Dias, N.L. ; Reddy, U. ; Bassett, K.P. ; Li, X. ; Coleman, J.J.
Author_Institution
Univ. of Illinois, Urbana, IL, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.
Keywords
etching; excited states; optical properties; semiconductor lasers; semiconductor quantum dots; 2D patterned quantum dot lattice; bandstructure engineering; excited state lasing; interdot coupling; phonon bottleneck-like effect; semiconductor laser; Gallium arsenide; Laser transitions; Lattices; Optical coupling; Optical scattering; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500020
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