DocumentCode :
520949
Title :
Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth
Author :
Ling, Shih-Chun ; Chang, Shih-Pang ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
We have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA.
Keywords :
Charge carrier processes; Electroluminescence; Gallium nitride; Gold; Light emitting diodes; Photonics; Power generation; Power measurement; Radiative recombination; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500553
Link To Document :
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