DocumentCode
520976
Title
High-brightness from unstable resonator mid-IR semiconductor lasers
Author
Ongstad, A.P. ; Dente, G.C. ; Tilton, M.L. ; Chavez, J.C. ; Kaspi, R. ; Gianardi, D.M.
Author_Institution
Air Force Res. Lab., Directed Energy Directorate AFRL/DELS, Kirtland AFB, NM, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
We describe high-brightness, broad area midinfrared semiconductor lasers. The laser structures incorporated 14 type-II quantum wells imbedded in thick waveguide/absorber regions composed of InGaAsSb. The optically pumped devices achieved higher brightness operation as unstable facets. For a 4 mm UR operating at λ=4.7µm and at 35 x threshold the device was observed to be diffraction limited. In comparison a standard Fabry-Perot laser was many times diffraction limited.
Keywords
Optical devices; Optical diffraction; Optical pumping; Optical resonators; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500580
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