Title :
Terahertz emission of magnesium doped indium nitride
Author :
Yeh, Y.-J. ; Ahn, H. ; Hong, Y.-L. ; Gwo, Shangjr
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg.
Keywords :
Acceleration; Doping; Electron mobility; Gallium arsenide; Indium; Magnesium; Optical films; Optical surface waves; Semiconductor films; Surface waves;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
