DocumentCode :
521065
Title :
Large signal analysis of AlGaInAs/InP laser transistor
Author :
Shirao, Mizuki ; Nishiyama, Nobuhiko ; Lee, SeungHun ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
A large signal analysis of a laser transistor based on AlGaInAs/InP long wavelength material system is carried out. Better eye diagrams over 40-Gbps modulation speed are obtained in laser transistors than that in laser diodes.
Keywords :
Damping; Diode lasers; Electron emission; Equations; High speed optical techniques; Indium phosphide; Laser theory; Optical modulation; Semiconductor lasers; Signal analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500674
Link To Document :
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