DocumentCode :
521251
Title :
Anisotropy of hot electron effective mass in n-doped InGaAs revealed by nonlinear THz-pump/THz-probe spectroscopy
Author :
Blanchard, F. ; Su, F.H. ; Razzari, L. ; Sharma, G. ; Morandotti, R. ; Ozaki, T. ; Reid, M. ; Hegmann, F.A.
Author_Institution :
INRS-EMT, Univ. du Quebec, Varennes, QC, Canada
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
We study ultrafast hot electron transport in n-doped InGaAs using polarization-sensitive nonlinear THz-pump/THz-probe spectroscopy. We observe an anisotropic effective mass for hot electrons due to the nonparabolicity of the conduction band.
Keywords :
III-V semiconductors; high-speed optical techniques; hot carriers; indium compounds; nonlinear optics; THz-probe spectroscopy; hot electron effective mass; nonlinear THz-pump; ultrafast hot electron transport; Anisotropic magnetoresistance; Effective mass; Electrons; Indium gallium arsenide; Laser excitation; Mass spectroscopy; Optical harmonic generation; Physics; Probes; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500865
Link To Document :
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