DocumentCode
521251
Title
Anisotropy of hot electron effective mass in n-doped InGaAs revealed by nonlinear THz-pump/THz-probe spectroscopy
Author
Blanchard, F. ; Su, F.H. ; Razzari, L. ; Sharma, G. ; Morandotti, R. ; Ozaki, T. ; Reid, M. ; Hegmann, F.A.
Author_Institution
INRS-EMT, Univ. du Quebec, Varennes, QC, Canada
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
We study ultrafast hot electron transport in n-doped InGaAs using polarization-sensitive nonlinear THz-pump/THz-probe spectroscopy. We observe an anisotropic effective mass for hot electrons due to the nonparabolicity of the conduction band.
Keywords
III-V semiconductors; high-speed optical techniques; hot carriers; indium compounds; nonlinear optics; THz-probe spectroscopy; hot electron effective mass; nonlinear THz-pump; ultrafast hot electron transport; Anisotropic magnetoresistance; Effective mass; Electrons; Indium gallium arsenide; Laser excitation; Mass spectroscopy; Optical harmonic generation; Physics; Probes; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500865
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