On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors

Author

Khosropour, Alireza ; Sazonov, Andrei

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

768

Lastpage

770

Abstract

In this letter, we study the response time characteristics of lateral hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon metal-semiconductor- metal (MSM) photodetectors. Devices with response time of 71 μs under green light illumination with λ = 525 nm (the wavelength of choice for indirect X-ray imaging) have been fabricated. The results show 42-fold and 4.2-fold improvement over the state of art single layer a-Si:H and double layer a-Si:H/molybdenumdisulphide (MoS2) MSM detectors, respectively.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogenation; metal-semiconductor-metal structures; nanofabrication; nanosensors; nanostructured materials; photodetectors; silicon; thin film sensors; Si-MoS₂; green light illumination; lateral hydrogenated amorphous silicon; nanocrystalline silicon metal-semiconductor-metal photodetector; response time characteristics; thin film silicon lateral MSM photodetector; time 71 mus; wavelength 525 nm; Amorphous silicon; Detectors; Photodetectors; Time factors; Transient analysis; Response time; photodetector; photodetector.; thin film silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2321535

Filename

6815685