Title :
Photoluminescence emission in deep ultraviolet region from GaN/ALN asymmetric-coupled quantum wells
Author :
Sun, Guan ; Tripathy, Suvranta K. ; Ding, Yujie J. ; Liu, Guangyu ; Huang, G.S. ; Zhao, Hongping ; Tansu, Nelson ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; asymmetric-coupled quantum wells; deep ultraviolet photoluminescence; electron volt energy 5.1 eV; electrons recombination; photoluminescence emission; Charge carrier processes; Gallium nitride; Laser excitation; Photoluminescence; Quantum computing; Quantum well lasers; Radiative recombination; Space vector pulse width modulation; Spontaneous emission; Wave functions;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
