• DocumentCode
    521515
  • Title

    Green light emitting diodes with high internal quantum efficiency InGaN/GaN self-organized quantum dots grown by RF-Plasma Assisted Molecular Beam Epitaxy

  • Author

    Zhang, Meng ; Guo, Wei ; Banerjee, Animesh ; Bhattacharya, Pallab

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Self-Organized green InGaN/GaN quantum dots with high internal quantum efficiency have been grown by RF-Plasma Assisted Molecular Beam Epitaxy. Green light emitting diodes based on these dots were fabricated and electroluminescence spectra were measured.
  • Keywords
    Atomic force microscopy; Electrons; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Photoluminescence; Quantum computing; Quantum dots; Substrates; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5501197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=521515