Title :
Green light emitting diodes with high internal quantum efficiency InGaN/GaN self-organized quantum dots grown by RF-Plasma Assisted Molecular Beam Epitaxy
Author :
Zhang, Meng ; Guo, Wei ; Banerjee, Animesh ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Self-Organized green InGaN/GaN quantum dots with high internal quantum efficiency have been grown by RF-Plasma Assisted Molecular Beam Epitaxy. Green light emitting diodes based on these dots were fabricated and electroluminescence spectra were measured.
Keywords :
Atomic force microscopy; Electrons; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Photoluminescence; Quantum computing; Quantum dots; Substrates; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
