Title :
Study of polarization properties of light emitted from tensile strained InGaN/AlInN quantum well
Author :
Dang, Po-Yuan ; Huang, Hung-Hsun ; Wu, Yuh-Renn
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper discusses the optical polarization anisotropic of a c-plane InGaN/AlInN quantum well under the tensile strain. The calculation results indicate that with particular In composition of AlInN alloy for the tensile strain, it is possible to reduce the quantum-confined Stark effect and make an out-planed polarized light source for edge emitting laser diodes or light emitting diodes.
Keywords :
Capacitive sensors; Diode lasers; Gallium nitride; Light emitting diodes; Optical devices; Optical polarization; Piezoelectric polarization; Stark effect; Stimulated emission; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
