Title :
Self-checking monitor for NBTI due degradation
Author :
Omana, M. ; Rossi, D. ; Bosio, N. ; Metr, C.
Author_Institution :
DEIS, Univ. of Bologna, Bologna, Italy
Abstract :
Performance degradation of integrated circuits due to aging effects, such as Negative Bias Temperature Instability (NBTI), is becoming of great concern for current and future CMOS technology. In this paper we propose a monitor able to detect NBTI due late transitions in the combinational part of a critical data-path. It requires lower area than recently proposed alternative solutions, and a lower or comparable power consumption. Moreover, differently from alternative solutions, our monitor is also self-checking with respect to its possible internal faults, thus avoiding the useless negative impact on system performance and the negative impact on system reliability which could otherwise take place in case of non self-checking sensors, should they get affected by faults.
Keywords :
CMOS integrated circuits; integrated circuit design; power consumption; CMOS technology; NBTI due degradation; aging effects; integrated circuits; negative bias temperature instability; performance degradation; power consumption; self-checking monitor; self-checking sensors; Aging; CMOS integrated circuits; CMOS technology; Circuit faults; Degradation; Integrated circuit technology; Monitoring; Negative bias temperature instability; Niobium compounds; Titanium compounds; NBTI degradation; critical data-path; monitor; selfchecking circuit;
Conference_Titel :
Mixed-Signals, Sensors and Systems Test Workshop (IMS3TW), 2010 IEEE 16th International
Conference_Location :
La Grande Motte
Print_ISBN :
978-1-4244-7792-0
Electronic_ISBN :
978-1-4244-7791-3
DOI :
10.1109/IMS3TW.2010.5503006