• DocumentCode
    521705
  • Title

    The Overvoltage LSA Relaxation Mode Study in Photoconductive Semiconductor Switch

  • Author

    Ma, Xiangrong ; Shi, Wei ; Ji, WeiLi ; Xue, Hong

  • Author_Institution
    Dept. of Appl. Phys., Xi´´an Univ. of Technol., Xi´´an, China
  • fYear
    2010
  • fDate
    19-21 June 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The 11mm big gap semi-insulating(SI) GaAs photoconductive semiconductor switch (PCSS) is triggered by pulse laser, steady non-linear output waveforms are shown at 5kV~8kV bias voltage, the linear trend present when the bias voltage is higher than 9kV, the nonlinear Lock-on effect is gradually disappeared with the voltage increasing, eventually the pulse development into a complete linear waveform. Analysis that: the big gap SI-GaAs PCSS operate in higher than many times threshold voltage when switch satisfy 2×104s.cm-3≤n0/f≤2×105s·cm-3 and n0L≥1013cm-2 conditions, switch work in overvoltage LSA(Limit Space charge Accumulate) relaxation mode.
  • Keywords
    gallium arsenide; limited space charge accumulation; optical pulse generation; optical switches; photoconductivity; semiconductor switches; GaAs; big gap semi-insulating; limit space charge accumulate relaxation mode; nonlinear Lock-on effect; overvoltage LSA relaxation mode; photoconductive semiconductor switch; pulse laser; Optical materials; Optical pulses; Optical switches; Photoconducting devices; Photoconducting materials; Photoconductivity; Power semiconductor switches; Space charge; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronic (SOPO), 2010 Symposium on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-4963-7
  • Electronic_ISBN
    978-1-4244-4964-4
  • Type

    conf

  • DOI
    10.1109/SOPO.2010.5504407
  • Filename
    5504407