High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing

Author

Hsin-Hui Hu ; Hsin-Ping Huang

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

345

Lastpage

347

Abstract

This letter investigates the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) using low temperature microwave annealing (MWA). MWA exhibits sufficient dopant activation efficiency, good short channel effect control, and a higher maximum oscillation frequency (f_max) of poly-Si TFTs than does rapid thermal annealing. In addition, MWA can fabricate nanoscale devices. Poly-Si TFTs with short channel annealed by microwave reveals better high-frequency performance and switching characteristics.

Keywords

annealing; oscillations; silicon; thin film transistors; MWA; Si; dopant activation efficiency; microwave annealing; nanoscale device; oscillation frequency; polysilicon TFT; short channel effect control; switching characteristic; thermal annealing; trigate polysilicon thin-film transistor high-frequency performance; Annealing; Logic gates; Microwave circuits; Microwave transistors; Silicides; Thin film transistors; Microwave annealing (MWA); polycrystalline silicon thin-film trans-istors (poly-Si TFTs); polycrystalline silicon thin-film transistors (poly-Si TFTs); radio frequency (RF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2399498

Filename

7031409