DocumentCode
52186
Title
Optical and Magnetic Properties of
Grown by Plasma-Assisted Molecular Beam Epitaxy
Author
Wu Ching Chou ; An-Jye Tzou ; Hsuan-Shao Chen ; Kun-Feng Chien ; Wen-Chung Fan ; Chu-Shou Yang ; Meei-Ru Chen ; Hui-Ling Kao ; Syang-Ywan Jeng ; Luc Huy Hoang
Author_Institution
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
50
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
1
Lastpage
4
Abstract
Zn1-xMnxO films (0 ≤ ×≤ 0.070) were grown by plasma-assisted molecular beam epitaxy on Si substrates with AlN buffer layers. For low Mn concentration samples, x ≤ 0.02, photoluminescence spectra show strong near band edge emission. Strong phonon and exciton coupling-induced resonant Raman scattering was observed. Paramagnetic, antiferromagnetic, and ferromagnetic phases were observed. Room temperature ferromagnetism for all samples was attributed to the bound magnetic polaron effect.
Keywords
II-VI semiconductors; Raman spectra; antiferromagnetic materials; doping profiles; excitons; ferromagnetic materials; magnetic epitaxial layers; magnetic polarons; manganese compounds; molecular beam epitaxial growth; paramagnetic materials; phonons; photoluminescence; plasma deposition; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; AlN buffer layers; Mn concentration; Si substrates; Si-AlN; Zn1-xMnxO; antiferromagnetic phases; bound magnetic polaron effect; exciton coupling-induced resonant Raman scattering; magnetic properties; near band edge emission; optical properties; paramagnetic phases; phonon coupling-induced resonant Raman scattering; photoluminescence spectra; plasma-assisted molecular beam epitaxy; room temperature ferromagnetism; temperature 293 K to 298 K; thin films; Frequency modulation; Ions; Magnetic hysteresis; Magnetic resonance; Manganese; Phonons; Zinc oxide; Magnetic semiconductors; semiconductor epitaxial layers; semiconductor films; semiconductor materials measurements;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2014.2304674
Filename
6832876
Link To Document