DocumentCode :
52297
Title :
High-Performance Flexible 
ReRAM Device for Low-Power Nonvolatile Memory Applications
Author :
Mondal, Sudipta ; Ching-Hao Chueh ; Tung-Ming Pan
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume :
34
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
1145
Lastpage :
1147
Abstract :
A high-performance very low-power flexible Ni/Sm2O3/indium tin oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of >103 ON/OFF current ratio with very low switching power of <;25 μW. Good memory retention of >105 at 85°C and switching endurance of 104 program-read-erase-read cycles is achieved in the highly flexible Ni/Sm2O3/ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.
Keywords :
indium compounds; low-power electronics; nickel; random-access storage; samarium compounds; ITO; Ni-Sm2O3-ITO; high-performance flexible ReRAM device; low-energy electron hopping conduction; low-power nonvolatile memory; low-power switching operation; on-off current ratio; oxide defect; program-read-erase-read cycle; resistive device; temperature 85 C; Electrodes; Electron devices; Indium tin oxide; Nickel; Nonvolatile memory; Resistance; Switches; ${rm Sm}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2272455
Filename :
6565393
Link To Document :
