DocumentCode :
52303
Title :
Scaling of Copper Seed Layer Thickness Using Plasma-Enhanced ALD and Optimized Precursors
Author :
Jiajun Mao ; Eisenbraun, Eric ; Omarjee, V. ; Korolev, Albert ; Dussarrat, C.
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
Volume :
26
Issue :
1
fYear :
2013
fDate :
Feb. 2013
Firstpage :
17
Lastpage :
22
Abstract :
Two recently developed precursors, AbaCus and Super AbaCus, are evaluated for use in ultralow temperature copper deposition by plasma enhanced atomic layer deposition. Film adhesion, platability, and process window evaluation demonstrate the strong capability of these precursors to overcome current metallization challenges.
Keywords :
adhesion; atomic layer deposition; metallisation; Super AbaCus; copper seed layer thickness; film adhesion; metallization challenges; optimized precursors; plasma enhanced atomic layer deposition; plasma-enhanced ALD; platability; process window evaluation; ultralow temperature copper deposition; Adhesives; Conductivity; Copper; Films; Plasma temperature; Thermal stability; AbaCus; BEOL; copper; plasma enhanced atomic layer deposition (PEALD); super AbaCus;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2012.2220789
Filename :
6324453
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=52303
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