Title :
Variable-latency adder (VL-adder): new arithmetic circuit design practice to overcome NBTI
Author :
Yiran Chen ; Hai Li ; Jing Li ; Cheng-Kok Koh
Author_Institution :
Seagate Technol., Bloomington, MN, USA
Abstract :
Negative bias temperature instability (NBTI) has become a dominant reliability concern for nanoscale PMOS transistors. In this paper, we propose variable-latency adder (VL-adder) technique for NBTI tolerance. By detecting the circuit failure on-the-fly, the proposed VL-adder can automatically shift data capturing clock edge to tolerate NBTI-induced delay degradation on critical timing paths. VL-adder operates with a fixed supply voltage and clock period, avoiding the high design and manufacturing costs incurred by existing NBTI-tolerant techniques. Compared to other related lower-power adder designs, VL-adder technique always provides better energy efficiency through the whole chip lifetime with very limited performance degradation (4.6% or less).
Keywords :
MOSFET; adders; logic design; low-power electronics; NBTI-induced delay degradation; NBTI-tolerant techniques; VL-adder; arithmetic circuit design; clock edge; energy efficiency; lower-power adder designs; manufacturing costs; nanoscale PMOS transistors; negative bias temperature instability; variable-latency adder technique; Adders; Arithmetic; Circuit synthesis; Clocks; Degradation; Delay; MOSFETs; Negative bias temperature instability; Niobium compounds; Titanium compounds; negative bias temperature instability (NBTI); variable-latency adder (VL-adder);
Conference_Titel :
Low Power Electronics and Design (ISLPED), 2007 ACM/IEEE International Symposium on
Conference_Location :
Portland, OR
Electronic_ISBN :
978-1-59593-709-4
DOI :
10.1145/1283780.1283822