Title :
UV-Ozone Process for Film Densification of Solution-Processed InGaZnO Thin-Film Transistors
Author :
Bo-Yuan Su ; An-Hsiu Cheng ; Jia-Ling Wu ; Chun-Cheng Lin ; Jian-Fu Tang ; Sheng-Yuan Chu ; Yung-Der Juang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2·V-1·s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2·V-1·s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.
Keywords :
adhesion; aluminium; amorphous semiconductors; densification; electron mobility; electron traps; gallium compounds; indium compounds; semiconductor thin films; sol-gel processing; thin film transistors; zinc compounds; InGaZnO-Al; S-D electrode adhesion properties; UV-ozone-treated TFT devices; bias stress stability; electron trapping; field-effect mobility; film densification; film packing density; reduced oxygen-related defects; sol-gel method; solution-processed amorphous thin-film transistors; subthreshold slope; Annealing; Films; Rough surfaces; Surface roughness; Surface treatment; Thermal stability; Thin film transistors; Amorphous InGaZnO (IGZO); sol-gel; ultraviolet (UV)-ozone;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2354364
