Correlation verification between transistor variability model with body biasing and ring oscillation frequency in 90nm subthreshold circuits

This paper presents modeling of manufacturing variability and body bias effect for subthreshold circuits based on measurement of a device array circuit in a 90 nm technology. The device array consists of P/NMOS transistors and ring oscillators. This work verifies the correlation between the variation model extracted from IV measurement results and oscillation frequencies, which means the transistor-level variation model is examined and confirmed in terms of circuit performance. We demonstrate that delay variations of subthreshold circuits are well characterized with two parameters - threshold voltage and subthreshold swing parameter. We reveal that body bias effect is a less statistical phenomenon and threshold voltage shift by body biasing can be modeled deterministically.