Title :
Doherty power amplifiers for handset applications
Author :
Kim, Bumman ; Kang, Daehyun ; Choi, Jinsung ; Kim, Dongsu
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The efficiency and linearity are enhanced by a direct input dividing and an uneven power drive. An optimized envelope tracking (ET) operation of Doherty power amplifier (PA) is presented. The PA and the supply modulator are realized using a 2 μm InGaP/GaAs HBT and 0.13 μm CMOS processes, respectively. For WiMAX application, it shows a PAE of 38.6% and an EVM of 3.64% at an output power of 24.22 dBm with a gain of 24.62 dB.
Keywords :
CMOS process; Gain; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Operational amplifiers; Power amplifiers; Power generation; Telephone sets; WiMAX; Broadband; Doherty; EER; Envelope tracking (ET); MMIC; efficient; handset; hetero-junction bipolar transistors (HBT); linear; power amplifier (PA);
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
