• DocumentCode
    525039
  • Title

    GaAs MMIC Doherty Power Amplifier with asymmetrical drain bias voltage

  • Author

    Colantonio, Paolo ; Giannini, Franco ; Giofré, Rocco ; Piacentini, Marco ; Piazzon, Luca

  • Author_Institution
    Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
  • fYear
    2010
  • fDate
    14-16 June 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a 3.4×2.3mm2 MMIC Doherty Power Amplifier in pHEMT GaAs technology, designed for X-Band applications (9.6 GHz). The obtained results shown 31dBm maximum output power with a 47.6% associated drain efficiency. Moreover, in the designed 6dB of output power back-off, from 25dBm to 31dBm output power, the efficiency is higher than 30% with a related gain compression lower than 1.5dB. As will be detailed, such a performance are maintained almost constant in a frequency bandwidth greater than 10% (9.1–10.1 GHz).
  • Keywords
    Design engineering; Frequency; Gallium arsenide; Impedance; MMICs; PHEMTs; Personal communication networks; Power amplifiers; Power generation; Voltage; MMIC design; doherty power amplifier; high efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
  • Conference_Location
    Vilnius, Lithuania
  • Print_ISBN
    978-1-4244-5288-0
  • Type

    conf

  • Filename
    5540434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=525039