Title :
High temperature stability of nitride-based power HEMTs
Author :
Maier, D. ; Alomari, M. ; Kohn, E. ; Diforte-Poisson, M.A. ; Dua, C. ; Delage, S.L. ; Grandjean, N. ; Carlin, J.-F. ; Chuvilin, A. ; Kaiser, U. ; Troadec, David ; Gaquière, Christophe
Author_Institution :
Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany
Abstract :
The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. Failure is thought to be contact metallization related, indicating an extremely robust InAlN/GaN heterostructure.
Keywords :
Contacts; Gallium nitride; Gold; HEMTs; Intrusion detection; MODFETs; Needles; Stability; Temperature; Testing; GaN heterostructures; High-Temperature Electronics; InAlN/GaN HEMT; Reliability;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
