DocumentCode
525097
Title
Achievement and perspective of GaN technology for microwave applications
Author
Delage, Sylvain L. ; Morvan, Erwan ; Sarazin, Nicolas ; Aubry, Raphaël ; Chartier, Eric ; Jardel, Olivier ; DiForte-Poisson, Marie-Antoinette ; Dua, Christian ; Jacquet, Jean-Claude ; Piotrowicz, Stéphane ; Piotrowska, Anna ; Kaminska, Eliana ; De Jaeger,
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear
2010
fDate
14-16 June 2010
Firstpage
1
Lastpage
5
Abstract
This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.
Keywords
Aluminum gallium nitride; Charge carrier density; Electron mobility; Frequency; Gallium nitride; HEMTs; Microwave technology; Photonic band gap; Silicon carbide; Substrates; GaN; amplifiers; component; microwave; power; solid-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location
Vilnius, Lithuania
Print_ISBN
978-1-4244-5288-0
Type
conf
Filename
5540506
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