Title :
Achievement and perspective of GaN technology for microwave applications
Author :
Delage, Sylvain L. ; Morvan, Erwan ; Sarazin, Nicolas ; Aubry, Raphaël ; Chartier, Eric ; Jardel, Olivier ; DiForte-Poisson, Marie-Antoinette ; Dua, Christian ; Jacquet, Jean-Claude ; Piotrowicz, Stéphane ; Piotrowska, Anna ; Kaminska, Eliana ; De Jaeger,
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.
Keywords :
Aluminum gallium nitride; Charge carrier density; Electron mobility; Frequency; Gallium nitride; HEMTs; Microwave technology; Photonic band gap; Silicon carbide; Substrates; GaN; amplifiers; component; microwave; power; solid-state;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
