Title :
GaN class E wideband microwave power amplifier
Author :
Makarov, Denis G. ; Krizhanovski, Vladimir G. ; Kistchinsky, Andrew A.
Author_Institution :
Radio Phys. Dept., Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
The simulation and experimental investigation of wideband class E power amplifier using GaN MESFET NPTB00025 was carried out. Special multi-resonant microstrip output network was used to obtain required load impedance. In addition, a single-frequency class E power amplifier was simulated and experimentally investigated for adjust values of parasitic elements of transistor´s model in switching-mode power amplifiers. In the bandwidth of 500–600 MHz output power of 9.2 W with power-added efficiency of 65 % and DC supply voltage of 18 V was obtained.
Keywords :
Bandwidth; Broadband amplifiers; Gallium nitride; Impedance; MESFETs; Microstrip; Microwave amplifiers; Power amplifiers; Power generation; Voltage; Class E; GaN MESFET; wideband;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
