• DocumentCode
    525858
  • Title

    Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range

  • Author

    Godignon, P. ; Jorda, X. ; Banu, V. ; Vellvehi, M. ; Millan, J. ; Brosselard, P. ; Lopez, D. ; Barbero, J.

  • Author_Institution
    CNM, CSIC, Barcelona, Spain
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    351
  • Lastpage
    354
  • Abstract
    We have developed SiC power Schottky diodes able to operate in the -170°C/+280°C temperature for the space mission BepiColombo. After a travel of 6 years, two satellites will be orbiting around Mercury during at least one year. The solar panels of the satellites will be exposed to a wide range thermal cycling stress (-170°C to +280°C). To target this application, we developed 5A/300V SiC Schottky diodes to be used as protection devices of the solar cells arrays. Both the front end and the back end technologies have been optimised. A diode selection methodology has been defined. The long term stability of packaged power SiC diodes in these temperature range and cycles is demonstrated.
  • Keywords
    Schottky diodes; silicon compounds; solar cell arrays; thermal management (packaging); SiC power Schottky diode; current 5 A; packaged power SiC diode; solar cells array; solar panel; space mission BepiColombo; temperature -170 C to 280 C; thermal cycling stress; voltage 300 V; Packaging; Photovoltaic cells; Protection; Satellites; Schottky diodes; Silicon carbide; Space missions; Stability; Temperature distribution; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5543862