Title :
Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range
Author :
Godignon, P. ; Jorda, X. ; Banu, V. ; Vellvehi, M. ; Millan, J. ; Brosselard, P. ; Lopez, D. ; Barbero, J.
Author_Institution :
CNM, CSIC, Barcelona, Spain
Abstract :
We have developed SiC power Schottky diodes able to operate in the -170°C/+280°C temperature for the space mission BepiColombo. After a travel of 6 years, two satellites will be orbiting around Mercury during at least one year. The solar panels of the satellites will be exposed to a wide range thermal cycling stress (-170°C to +280°C). To target this application, we developed 5A/300V SiC Schottky diodes to be used as protection devices of the solar cells arrays. Both the front end and the back end technologies have been optimised. A diode selection methodology has been defined. The long term stability of packaged power SiC diodes in these temperature range and cycles is demonstrated.
Keywords :
Schottky diodes; silicon compounds; solar cell arrays; thermal management (packaging); SiC power Schottky diode; current 5 A; packaged power SiC diode; solar cells array; solar panel; space mission BepiColombo; temperature -170 C to 280 C; thermal cycling stress; voltage 300 V; Packaging; Photovoltaic cells; Protection; Satellites; Schottky diodes; Silicon carbide; Space missions; Stability; Temperature distribution; Thermal stresses;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X