DocumentCode
525858
Title
Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range
Author
Godignon, P. ; Jorda, X. ; Banu, V. ; Vellvehi, M. ; Millan, J. ; Brosselard, P. ; Lopez, D. ; Barbero, J.
Author_Institution
CNM, CSIC, Barcelona, Spain
fYear
2010
fDate
6-10 June 2010
Firstpage
351
Lastpage
354
Abstract
We have developed SiC power Schottky diodes able to operate in the -170°C/+280°C temperature for the space mission BepiColombo. After a travel of 6 years, two satellites will be orbiting around Mercury during at least one year. The solar panels of the satellites will be exposed to a wide range thermal cycling stress (-170°C to +280°C). To target this application, we developed 5A/300V SiC Schottky diodes to be used as protection devices of the solar cells arrays. Both the front end and the back end technologies have been optimised. A diode selection methodology has been defined. The long term stability of packaged power SiC diodes in these temperature range and cycles is demonstrated.
Keywords
Schottky diodes; silicon compounds; solar cell arrays; thermal management (packaging); SiC power Schottky diode; current 5 A; packaged power SiC diode; solar cells array; solar panel; space mission BepiColombo; temperature -170 C to 280 C; thermal cycling stress; voltage 300 V; Packaging; Photovoltaic cells; Protection; Satellites; Schottky diodes; Silicon carbide; Space missions; Stability; Temperature distribution; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5543862
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