Title :
Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs
Author :
Saito, Wataru ; Nitta, Tomohiro ; Kakiuchi, Yorito ; Saito, Yasunobu ; Noda, Takao ; Fujimoto, Hidetoshi ; Yoshioka, Akira ; Ohno, Tetsuya
Author_Institution :
Toshiba Corp., Semicond. Co., Kawasaki, Japan
Abstract :
This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7 hours, the change of the dynamic on-resistance also depended on the maximum electric field. The optimal FP structure minimized the increase of the dynamic on-resistance and realized high reliability due to minimization of the electric field peaks.
Keywords :
III-V semiconductors; electric current; electric fields; gallium compounds; high electron mobility transistors; semiconductor device reliability; semiconductor device testing; wide band gap semiconductors; GaN; current collapse phenomena; dynamic on resistance; electric field peak; field plate structure; gate edge electric field; high voltage HEMT reliability; maximum electric field; switching test; time 7 hour; Circuits; Damping; Doping profiles; Insulated gate bipolar transistors; Performance loss; Power engineering and energy; Power semiconductor devices; Temperature; Ultra large scale integration; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
