Low voltage TrenchMOS combining low specific RDS(on) and QG FOM

The combination of low specific on-resistance, Sp.R_DS(on), and low gate charge, Q_G and Q_GD, has been achieved by applying a superjunction approach to an n-type 30 V vertical trench power MOSFET structure. Whereas lateral technologies have low Q_G and Q_GD figures of merit with poor Sp.R_DS(on) (due to cell pitch limitations) and split-gate RSO structures have excellent Sp.R_DS(on) and Q_GD FOM at the expense of the Q_G FOM (due to creation of additional C_GS), the superjunction structure has been shown to be achieving benchmark performance in all three of these performance indicators simultaneously. For a 30 V rated device, specific on-state resistances of 3.9 mΩmm² (V_GS=10V) and 6.5 mΩmm² (V_GS=4.5V) have been demonstrated along with switching figures of merit as low as 22.7 mΩnC (RDS(on)×QG) and 4.6 mΩnC (R_DS(on)×QGD). The result is a technology that combines the best aspects of both vertical trench and lateral power MOSFET structures.