• DocumentCode
    525866
  • Title

    Analyzing Super-Junction C-V to estimate charge imbalance

  • Author

    Bobde, Madhur ; Guan, Lingpeng ; Bhalla, Anup ; Wang, Fei ; Ho, Moses

  • Author_Institution
    Alpha & Omega Semicond., Sunnyvale, CA, USA
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    321
  • Lastpage
    324
  • Abstract
    In this paper, we present a new technique to model charge imbalance in Super Junction devices using junction (Drain-Source for MOSFET) C-V measurements. In contrast to Breakdown Voltage measurement that can also be used for this purpose, this technique offers significant advantages by having no dependence on the edge termination BV for its accuracy. In addition, this method can be used to estimate both the magnitude (δQ) and polarity (Qp>Qn or Qp<;Qn) of charge imbalance.
  • Keywords
    MOSFET; electric breakdown; electric current measurement; voltage measurement; MOSFET; breakdown voltage measurement; charge imbalance estimation; drain-source; edge termination breakdown voltage; junction C-V measurements; super junction devices; Analytical models; Breakdown voltage; Capacitance; Capacitance-voltage characteristics; Charge measurement; Current measurement; Doping; MOSFET circuits; Power semiconductor devices; Quadratic programming;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5543885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=525866