Title :
Analyzing Super-Junction C-V to estimate charge imbalance
Author :
Bobde, Madhur ; Guan, Lingpeng ; Bhalla, Anup ; Wang, Fei ; Ho, Moses
Author_Institution :
Alpha & Omega Semicond., Sunnyvale, CA, USA
Abstract :
In this paper, we present a new technique to model charge imbalance in Super Junction devices using junction (Drain-Source for MOSFET) C-V measurements. In contrast to Breakdown Voltage measurement that can also be used for this purpose, this technique offers significant advantages by having no dependence on the edge termination BV for its accuracy. In addition, this method can be used to estimate both the magnitude (δQ) and polarity (Qp>Qn or Qp<;Qn) of charge imbalance.
Keywords :
MOSFET; electric breakdown; electric current measurement; voltage measurement; MOSFET; breakdown voltage measurement; charge imbalance estimation; drain-source; edge termination breakdown voltage; junction C-V measurements; super junction devices; Analytical models; Breakdown voltage; Capacitance; Capacitance-voltage characteristics; Charge measurement; Current measurement; Doping; MOSFET circuits; Power semiconductor devices; Quadratic programming;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
