A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

Author

Minixhofer, R. ; Feilchenfeld, N. ; Knaipp, M. ; Röhrer, G. ; Park, J.M. ; Zierak, M. ; Enichlmair, H. ; Levy, M. ; Loeffler, B. ; Hershberger, D. ; Unterleitner, F. ; Gautsch, M. ; Chatty, K. ; Shi, Y. ; Posch, W. ; Seebacher, E. ; Schrems, M. ; Dunn, J.

Author_Institution

R&D Dept., Austriamicrosystems AG, Unterpremstaetten, Austria

fYear

2010

fDate

6-10 June 2010

Firstpage

75

Lastpage

78

Abstract

Power management and sensor driver integrated circuits need technologies with high breakdown voltage (BVdss), low on-resistance (Rsp) and preferably low process complexity and improved integration. A new 180nm High Voltage CMOS (HVCMOS) technology is described which includes LDMOS devices with 160V BVdss and an N-LDMOS device with minimum Rsp of 14.4mOhm·mm² for 34V BVdss as part of a suite of LDMOS devices with 30-160V BVds. Ten year SOA lifetime and 8KV HBM ESD capability are documented to provide a HVCMOS technology which addresses the widest reported range of use voltage applications (5-120V) for 180nm and can be used for designs which require a merging of wireless and power management.

Keywords

CMOS digital integrated circuits; MIS devices; power integrated circuits; system-on-chip; HBM ESD capability; HVCMOS technology; N-LDMOS device; high-voltage CMOS smart power technology; power management; sensor driver integrated circuits; size 180 nm; system-on-chip integration; voltage 5 V to 160 V; CMOS technology; Driver circuits; Energy management; Integrated circuit technology; Intelligent sensors; Power system management; Semiconductor optical amplifiers; System-on-a-chip; Technology management; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5543961